All MOSFET. NP89N04MUK Datasheet

 

NP89N04MUK MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP89N04MUK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-220

 NP89N04MUK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP89N04MUK Datasheet (PDF)

 ..1. Size:103K  renesas
 np89n04muk np89n04nuk.pdf

NP89N04MUK NP89N04MUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Des

 7.1. Size:103K  renesas
 np89n04puk.pdf

NP89N04MUK NP89N04MUK

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 07, 2011Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut

 7.2. Size:104K  renesas
 np89n04pdk.pdf

NP89N04MUK NP89N04MUK

Preliminary Data Sheet NP89N04PDK R07DS1016EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF

 8.1. Size:102K  renesas
 np89n055puk.pdf

NP89N04MUK NP89N04MUK

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au

 8.2. Size:103K  renesas
 np89n055muk np89n055nuk.pdf

NP89N04MUK NP89N04MUK

Preliminary Data Sheet NP89N055MUK, NP89N055NUK R07DS0600EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) D

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