NP89N04PDK Specs and Replacement
Type Designator: NP89N04PDK
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 530 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00295 Ohm
Package: TO-263
NP89N04PDK substitution
- MOSFET ⓘ Cross-Reference Search
NP89N04PDK datasheet
np89n04pdk.pdf
Preliminary Data Sheet NP89N04PDK R07DS1016EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF... See More ⇒
np89n04puk.pdf
Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 07, 2011 Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut... See More ⇒
np89n04muk np89n04nuk.pdf
Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Des... See More ⇒
np89n055puk.pdf
Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 17, 2011 Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au... See More ⇒
Detailed specifications: NP88N075CUE, NP88N075DUE, NP88N075EUE, NP88N075KUE, NP88N075MUE, NP88N075NUE, NP89N04MUK, NP89N04NUK, IRF640N, NP89N04PUK, NP89N055MUK, NP89N055NUK, NP89N055PUK, NP90N03VHG, NP90N03VLG, NP90N03VUG, NP90N04MDH
Keywords - NP89N04PDK MOSFET specs
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