NP90N04MDH MOSFET. Datasheet pdf. Equivalent

   Type Designator: NP90N04MDH
   Marking Code: 90N04DH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO-220

NP90N04MDH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NP90N04MDH Datasheet (PDF)

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np90n04mdh np90n04ndh np90n04pdh.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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np90n04muk np90n04nuk.pdf

Preliminary Data Sheet NP90N04MUK, NP90N04NUK R07DS0601EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V) Des

6.2. Size:353K renesas
np90n04muh np90n04nuh np90n04puh.pdf