All MOSFET. NP90N055VDG Datasheet

 

NP90N055VDG Datasheet and Replacement


   Type Designator: NP90N055VDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

 NP90N055VDG substitution

   - MOSFET ⓘ Cross-Reference Search

 

NP90N055VDG Datasheet (PDF)

 ..1. Size:329K  renesas
np90n055vdg.pdf pdf_icon

NP90N055VDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:325K  renesas
np90n055vug.pdf pdf_icon

NP90N055VDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:102K  renesas
np90n055vuk.pdf pdf_icon

NP90N055VDG

Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 29, 2011Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for a

 6.1. Size:103K  renesas
np90n055muk np90n055nuk.pdf pdf_icon

NP90N055VDG

Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) D

Datasheet: NP90N055MDH , NP90N055MUH , NP90N055MUK , NP90N055NDH , NP90N055NUH , NP90N055NUK , NP90N055PDH , NP90N055PUH , 4435 , NP90N055VUG , NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS .

History: SP8M3-TB | SSG4463P

Keywords - NP90N055VDG MOSFET datasheet

 NP90N055VDG cross reference
 NP90N055VDG equivalent finder
 NP90N055VDG lookup
 NP90N055VDG substitution
 NP90N055VDG replacement

 

 
Back to Top

 


 
.