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NP90N055VDG Specs and Replacement


   Type Designator: NP90N055VDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

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NP90N055VDG datasheet

 ..1. Size:329K  renesas
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NP90N055VDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:325K  renesas
np90n055vug.pdf pdf_icon

NP90N055VDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.2. Size:102K  renesas
np90n055vuk.pdf pdf_icon

NP90N055VDG

Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) Designed for a... See More ⇒

 6.1. Size:103K  renesas
np90n055muk np90n055nuk.pdf pdf_icon

NP90N055VDG

Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4900 pF TYP. (VDS = 25 V) D... See More ⇒

Detailed specifications: NP90N055MDH , NP90N055MUH , NP90N055MUK , NP90N055NDH , NP90N055NUH , NP90N055NUK , NP90N055PDH , NP90N055PUH , 5N65 , NP90N055VUG , NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS .

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