NP90N055VDG Datasheet and Replacement
Type Designator: NP90N055VDG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
NP90N055VDG substitution
NP90N055VDG Datasheet (PDF)
np90n055vdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np90n055vug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np90n055vuk.pdf

Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 29, 2011Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for a
np90n055muk np90n055nuk.pdf

Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) D
Datasheet: NP90N055MDH , NP90N055MUH , NP90N055MUK , NP90N055NDH , NP90N055NUH , NP90N055NUK , NP90N055PDH , NP90N055PUH , 4435 , NP90N055VUG , NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS .
Keywords - NP90N055VDG MOSFET datasheet
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History: SP8M3-TB | SSG4463P



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