TP2302NR Datasheet and Replacement

TP2302NR N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA WE DECLARE THAT THE MATERIAL OF PRODUCT COMPLIANCE WITH ROHS REUIREMENTS. Pb Free: TP2302NR

ZXTP23015CFH15V, SOT23, PNP medium power transistorSummary V(BR)CES > -15V, V(BR)CEO > -15VV(BR)ECO > -6VIC(CONT) = -6A RCE(SAT) = 20m typicalVCE(SAT)

Preliminary Technical InformationVDSS = 40VTrenchT4TMIXTP230N04T4MID25 = 230APower MOSFET RDS(on) 2.9m (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDTO-220Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGIsolated TabDSVDGR TJ = 25C to 175C, RGS = 1M 40 VVG

TrenchT2TM VDSS = 75VIXTA230N075T2ID25 = 230APower MOSFETIXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement ModeAvalanche Rated TO-263 (IXTA)GSD (Tab)TO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSM Transient 20 VGDSID25 TC = 25C 2

Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res

Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2301S3 ID -1.6A75m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m(typ.)RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance

Spec. No. : C417N3 Issued Date : 2007.07.27 CYStech Electronics Corp. Revised Date : 2018.12.06 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features

Spec. No. : C426N3 Issued Date : 2008.03.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS

CTP2303Crownpo TechnologyCTP2303 P-Channel Enhancement Mode MOSFET FeaturesDescription -30V/-1.7A,RDS(ON)=240 m @VGS=- 10V The CTP2303 is the P-Channel logic enhancement -30V/-1.3A,R =460 m @VGS=-4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(O

STP2305 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP2305 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =55m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =65m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =87m(typ.)@VGS =-2.5V provide exce

STP2301 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP2301 is the P-Channel logic enhancement -20V/-3.0A, RDS(ON) =80m(typ.)@VGS =-4.5V mode power field effect transistor is produced using -20V/-2.0A, RDS(ON) =105m(typ.)@VGS =-2.5V high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and Super h

TP2301PR P-CHANNEL ENHANCEMENT-MODE MOSFET FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA WE DECLARE THAT

TP2305PR P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA

MTP2301N3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

isc N-Channel MOSFET Transistor IXTP230N04T4FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO