All MOSFET. JCS4N60RB Datasheet

 

JCS4N60RB Datasheet and Replacement


   Type Designator: JCS4N60RB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: DPAK
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JCS4N60RB Datasheet (PDF)

 ..1. Size:1019K  1
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf pdf_icon

JCS4N60RB

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 ..2. Size:1045K  jilin sino
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf pdf_icon

JCS4N60RB

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

 6.1. Size:1304K  jilin sino
 jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf pdf_icon

JCS4N60RB

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 6.2. Size:1259K  jilin sino
 jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf pdf_icon

JCS4N60RB

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

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History: MPVA4N70F | HLML6401 | MTM45N05E | CS16N60P | HCS65R450S | TK4A80E | AP85T03GH-HF

Keywords - JCS4N60RB MOSFET datasheet

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