ME80N75FG PDF and Equivalents Search

 

ME80N75FG Specs and Replacement

Type Designator: ME80N75FG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40.8 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-220F

ME80N75FG substitution

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ME80N75FG datasheet

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 me80n75f me80n75fg.pdf pdf_icon

ME80N75FG

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den... See More ⇒

 6.1. Size:1150K  matsuki electric
 me80n75f me80n75f-g.pdf pdf_icon

ME80N75FG

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den... See More ⇒

 7.1. Size:1190K  matsuki electric
 me80n75t me80n75t-g.pdf pdf_icon

ME80N75FG

ME80N75T / ME80N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den... See More ⇒

 9.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N75FG

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p... See More ⇒

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Detailed specifications: H06N60U, JCS4N60VB, JCS4N60RB, JCS4N60BB, JCS4N60CB, JCS4N60FB, LD1014D, ME80N75F, RU7088R, MMF60R280QTH, NCE3401AY, NDF08N60ZG, NDP08N60ZG, PTF10149, RJK0234DNS, SPP100N06S2-05, SPB100N06S2-05

Keywords - ME80N75FG MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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