CMI100N04 PDF and Equivalents Search

 

CMI100N04 Specs and Replacement

Type Designator: CMI100N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 112 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO262

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CMI100N04 datasheet

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 cmp100n04 cmb100n04 cmi100n04.pdf pdf_icon

CMI100N04

CMP100N04/CMB100N04/CMI100N04 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The100N04 is N-ch MOSFE Ts BVDSS RDSON ID with extreme high cell density , 40V ... See More ⇒

Detailed specifications: 7N80G-TA3-T, 7N80G-TF3-T, 7N80G-TF1-T, 7N80G-TQ2-R, 7N80G-TQ2-T, AO3419L, CMP100N04, CMB100N04, AON6380, HY4306W, HY4306A, MDF1723, ME4410AD, ME4970, ME4970G, NDP04N60Z, PDEC3907Z

Keywords - CMI100N04 MOSFET specs

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