All MOSFET. CMI100N04 Datasheet

 

CMI100N04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMI100N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO262

 CMI100N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMI100N04 Datasheet (PDF)

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 cmp100n04 cmb100n04 cmi100n04.pdf

CMI100N04 CMI100N04

CMP100N04/CMB100N04/CMI100N04N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe100N04 is N-ch MOSFETs BVDSS RDSON ID with extreme high cell density ,40V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCEP068N10G | APM4550KC | DMN3051L | JCS12N65BEI

 

 
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