All MOSFET. CMI100N04 Datasheet

 

CMI100N04 Datasheet and Replacement


   Type Designator: CMI100N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO262
 

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CMI100N04 Datasheet (PDF)

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CMI100N04

CMP100N04/CMB100N04/CMI100N04N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe100N04 is N-ch MOSFETs BVDSS RDSON ID with extreme high cell density ,40V

Datasheet: 7N80G-TA3-T , 7N80G-TF3-T , 7N80G-TF1-T , 7N80G-TQ2-R , 7N80G-TQ2-T , AO3419L , CMP100N04 , CMB100N04 , IRLZ44N , HY4306W , HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , PDEC3907Z .

History: JCS7HN60C | TK56A12N1

Keywords - CMI100N04 MOSFET datasheet

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