ME4970G PDF and Equivalents Search

 

ME4970G Specs and Replacement

Type Designator: ME4970G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOP8

ME4970G substitution

- MOSFET ⓘ Cross-Reference Search

 

ME4970G datasheet

 ..1. Size:1028K  1
 me4970 me4970g.pdf pdf_icon

ME4970G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON) 16m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely ... See More ⇒

 8.1. Size:1213K  matsuki electric
 me4970 me4970-g.pdf pdf_icon

ME4970G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON) 16m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely ... See More ⇒

 8.2. Size:1148K  matsuki electric
 me4970a me4970a-g.pdf pdf_icon

ME4970G

ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON) 14m @VGS=10V power field effect transistors are produced using high cell density, RDS(ON) 20m @VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD... See More ⇒

 8.3. Size:939K  cn vbsemi
 me4970.pdf pdf_icon

ME4970G

ME4970 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S D ... See More ⇒

SHOW MORE

Detailed specifications: CMP100N04, CMB100N04, CMI100N04, HY4306W, HY4306A, MDF1723, ME4410AD, ME4970, IRFP450, NDP04N60Z, PDEC3907Z, PFB2N60, PFF2N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20

Keywords - ME4970G MOSFET specs

 ME4970G cross reference

 ME4970G equivalent finder

 ME4970G pdf lookup

 ME4970G substitution

 ME4970G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.