FDPF8D5N10C
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDPF8D5N10C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 76
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 1010
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085
Ohm
Package:
TO-220F
FDPF8D5N10C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDPF8D5N10C
Datasheet (PDF)
..1. Size:969K 1
fdp8d5n10c fdpf8d5n10c.pdf 
www.onsemi.comFDP8D5N10C / FDPF8D5N10CN-Channel Shielded Gate PowerTrench MOSFET 100 V, 76 A, 8.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 8.5 m at VGS = 10 V, ID = 76 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has been
..2. Size:969K onsemi
fdp8d5n10c fdpf8d5n10c.pdf
www.onsemi.comFDP8D5N10C / FDPF8D5N10CN-Channel Shielded Gate PowerTrench MOSFET 100 V, 76 A, 8.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 8.5 m at VGS = 10 V, ID = 76 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has been
..3. Size:249K inchange semiconductor
fdpf8d5n10c.pdf
isc N-Channel MOSFET Transistor FDPF8D5N10CFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
9.1. Size:719K fairchild semi
fdp8n50nz fdpf8n50nzt.pdf
October 2009UniFETTMFDP8N50NZ / FDPF8N50NZTN-Channel MOSFET 500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been
9.2. Size:245K fairchild semi
fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf
March 2010UniFETTMFDP8N50NZ / FDPF8N50NZtmN-Channel MOSFET500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been es
9.3. Size:677K fairchild semi
fdp8n50nzu fdpf8n50nzu.pdf
February 2010UniFET-IITMFDP8N50NZU / FDPF8N50NZUtmN-Channel MOSFET500V, 6.5A, 1.2Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance t echnology
9.4. Size:236K fairchild semi
fdp8n50nzf fdpf8n50nzf.pdf
February 2010UniFET-IITMFDP8N50NZF / FDPF8N50NZFtmN-Channel MOSFET500V, 7A, 1Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has
9.5. Size:534K fairchild semi
fdp8n60zu fdpf8n60zut.pdf
April 2009UniFETTMFDP8N60ZU / FDPF8N60ZUTN-Channel MOSFET, FRFET 600V, 6.5A, 1.35Features Description RDS(on) = 1.15m ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 10pF)This advanced techno
9.6. Size:894K onsemi
fdpf8n50nzf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.7. Size:698K onsemi
fdpf8n60zut.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.8. Size:888K onsemi
fdp8n50nz fdpf8n50nz.pdf
October 2013FDP8N50NZ / FDPF8N50NZN-Channel UniFETTM II MOSFET500 V, 8 A, 850 mFeatures Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC)technology. This advanced MOSFET family has the smallest Low Crss (
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
