IPA60R360P7 PDF and Equivalents Search

 

IPA60R360P7 Specs and Replacement

Type Designator: IPA60R360P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO-220FP

IPA60R360P7 substitution

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IPA60R360P7 datasheet

 ..1. Size:1082K  1
ipa60r360p7.pdf pdf_icon

IPA60R360P7

IPA60R360P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MO... See More ⇒

 ..2. Size:1103K  infineon
ipa60r360p7.pdf pdf_icon

IPA60R360P7

IPA60R360P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET... See More ⇒

 ..3. Size:237K  inchange semiconductor
ipa60r360p7.pdf pdf_icon

IPA60R360P7

isc N-Channel MOSFET Transistor IPA60R360P7 FEATURES Drain-source on-resistance RDS(on) 0.36 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒

 0.1. Size:894K  infineon
ipa60r360p7s.pdf pdf_icon

IPA60R360P7

IPA60R360P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ M... See More ⇒

Detailed specifications: FQD50N06, FQD50P06, IPA030N10N3, IPA037N08N3, IPA045N10N3, IPA057N08N3, IPA086N10N3, IPA60R180C7, IRF740, IPAN60R650CE, IPB048N15N5, IPI030N10N3, IPI037N08N3, IPI041N12N3, IPI051N15N5, IPI072N10N3, IPI075N15N3

Keywords - IPA60R360P7 MOSFET specs

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