IPB048N15N5 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB048N15N5
Marking Code: 048N15N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 1500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO-263
IPB048N15N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB048N15N5 Datasheet (PDF)
ipb048n15n5.pdf
IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf
IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf
Isc N-Channel MOSFET Transistor IPB048N15N5FEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb048n15n5lf.pdf
IPB048N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb048n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB048N15N5LFDESCRIPTIONDrain Current I = 120A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER
ipb048n06lg ipp048n06lg5.pdf
IPP048N06L G IPB048N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 4 4 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
