IPI030N10N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI030N10N3
Marking Code: 030N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 155 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 1940 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO-262
IPI030N10N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI030N10N3 Datasheet (PDF)
ipi030n10n3.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
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IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h
ipi034ne7n3g ipp034ne7n3g.pdf
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IPP034NE7N3 GIPI034NE7N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 75 VDS Optimized technology for synchronous rectificationR 3.4mDS(on),max Ideal for high frequency switching and DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf
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Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06
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IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1
ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf
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Type IPB029N06N3 G IPI032N06N3 GIPP032N06N3 GOptiMOS3 Power-TransistorProduct SummaryV 60 VFeatures DSR 2.9m Ideal for high frequency switching and sync. rec. DS(on),max (SMD)I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t
ipp034ne7n3g ipi034ne7n3g.pdf
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## ! ! # ! ! TM #:A0 4 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf
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IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested
ipi037n08n3.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![IPI030N10N3](https://alltransistors.com/images/us.png)
![IPI030N10N3](https://alltransistors.com/images/es.png)
![IPI030N10N3](https://alltransistors.com/images/ru.png)
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