IPI111N15N3 MOSFET Datasheet: N-Ch, 150V, 83A. Full specification with pinout and replacement list

IPI111N15N3 Specs and Replacement

Type Designator: IPI111N15N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 83 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 378 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm

Package: TO-262

IPI111N15N3 substitution

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IPI111N15N3 datasheet

..1. Size:286K inchange semiconductor
ipi111n15n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI111N15N3 FEATURES Static drain-source on-resistance RDS(on) 11.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

0.1. Size:757K infineon
ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf pdf_icon

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM) DS(on) ID 83 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDE... See More ⇒

0.2. Size:438K infineon
ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf pdf_icon

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 10.8 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 83 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE... See More ⇒

9.1. Size:690K infineon
ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl... See More ⇒