IPI200N15N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI200N15N3
Marking Code: 200N15N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 214 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO-262
IPI200N15N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI200N15N3 Datasheet (PDF)
0.1. ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf 
Size:993K _infineon
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 150 V • N-channel, normal level RDS(on),max 20 mW • Excellent gate charge x R product (FOM) DS(on) ID 50 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for t
0.2. ipi200n15n3.pdf Size:271K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPI200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync. Rec. ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA
7.1. ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g.pdf Size:758K _infineon
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • N-channel, normal level RDS(on),max 20 mW • Excellent gate charge x R product (FOM) DS(on) ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
7.2. ipi200n25n3.pdf Size:270K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPI200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM
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