12N65KL-TA MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N65KL-TA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 225 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 175 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO-220

12N65KL-TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N65KL-TA Datasheet (PDF)

5.1. 12n65kl-t 12n65kg-t.pdf Size:298K _1

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

9.1. jcs12n65t.pdf Size:1140K _1

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS12N65T 封装 Package 主要参数 MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson （@Vgs=10V） 0.78 Ω Qg 39 nC APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源 based on half bridge UPS 产品特性 FEA

9.2. svf12n65f svf12n65t.pdf Size:586K _1

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

9.3. stl12n65m2.pdf Size:460K _st

STL12N65M2 N-channel 650 V, 0.62 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N65M2 650 V 0.75 Ω 5 A 48 W 1 • Extremely low gate charge 2 3 • Excellent output capacitance (COSS) profile 4 • 100% avalanche tested • Zener-protected PowerFLAT™ 5x6 HV Ap

9.4. sty112n65m5.pdf Size:823K _st

STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh™ V Power MOSFET Max247 Features VDSS Order code RDS(on) max ID @TjMAX STY112N65M5 710 V < 0.022 Ω 96 A ■ Max247 worldwide best RDS(on) ■ Higher VDSS rating 3 2 ■ Higher dv/dt capability 1 ■ Excellent switching performance Max247 ■ Easy to drive ■ 100% avalanche tested Application Figure 1. Internal schemati

9.5. std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf Size:1040K _st

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V < 0.43 Ω 8.5 A 70 W 1 STP12N65M5 8.5 A 70 W DPAK STU12N65M5 8.5 A 70 W 3 1. Limite

9.6. std12n65m2.pdf Size:935K _st

STD12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 Ω 8 A  Extremely low gate charge  Excellent output capacitance (COSS) profile DPAK (TO-252)  100% avalanche tested  Zener-protected Figure 1: Internal schematic diagram Applicatio

9.7. stf12n65m2.pdf Size:837K _st

STF12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID STF12N65M2 650 V 0.5 Ω 8 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested 3 2 • Zener-protected 1 Applications TO-220FP • Switching applications Figure

9.8. sihb12n65e.pdf Size:150K _vishay

SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

9.9. sihf12n65e.pdf Size:134K _vishay

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

9.10. sihp12n65e.pdf Size:167K _vishay

SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

9.11. ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf Size:200K _ixys

Advance Technical Information X2-Class VDSS = 650V IXTA12N65X2 Power MOSFET ID25 = 12A IXTP12N65X2   RDS(on)    300m     IXTH12N65X2 N-Channel Enhancement Mode TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30

9.12. ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf Size:278K _ixys

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2   RDS(on)    310m     IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr

9.13. cjpf12n65.pdf Size:313K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s

9.14. cjp12n65.pdf Size:392K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP12N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig

9.15. cep12n65 ceb12n65 cef12n65.pdf Size:386K _cet

CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73Ω 12A 10V CEB12N65 650V 0.73Ω 12A 10V CEF12N65 650V 0.73Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C

9.16. wnm12n65-f.pdf Size:1048K _willsemi

WNM12N65/WNM12N65F WNM12N65/WNM12N65F 650V N-Channel MOSFET Description Features °C The WNM12N65/WNM12N65F is N-Channel  650V@TJ=25 enhancement MOS Field Effect Transistor. Uses  Typ.RDS(on)=0.57Ω advanced high voltage MOSFET Process and  Low gate charge design to provide excellent RDS (ON) with low gate  100% avalanche tested charge. This device is suitable for use in p

9.17. h12n65.pdf Size:199K _hsmc

Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.03.24 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H12N65 Series H12N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E N-Channel Power MOSFET (650V,12A) Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Applications 3 • Switch Mode Power Supply 2 1 • Uninterruptable Power Supply 3-L

9.18. aob12n65l.pdf Size:385K _aosemi

AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.72Ω performance and robustness in popular AC-DC applications. By providing low RDS

9.19. aotf12n65.pdf Size:381K _aosemi

AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

9.20. aow12n65.pdf Size:240K _aosemi

AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss al

9.21. aot12n65.pdf Size:381K _aosemi

9.22. aowf12n65.pdf Size:240K _aosemi

9.23. am12n65pcfm.pdf Size:271K _analog_power

Analog Power AM12N65PCFM N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 800 @ VGS = 10V 7 • Low thermal impedance 650 850 @ VGS = 6V 6.5 • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTH

9.24. am12n65p.pdf Size:287K _analog_power

Analog Power AM12N65P N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 800 @ VGS = 10V • Low thermal impedance 650 12a 850 @ VGS = 6V • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems DRAIN connected • Industrial DC/DC Conversion Circuits

9.25. afn12n65t220ft afn12n65t220t.pdf Size:568K _alfa-mos

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat

9.26. sif12n65c.pdf Size:293K _sisemi

深圳深爱半导体股份有限公司产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF12N65C N- MOS 管/ N-CHANNEL POWER MOSFET SIF12N65C

9.27. mtn12n65fp.pdf Size:407K _cystek

Spec. No. : C802FP Issued Date : 2010.01.08 CYStech Electronics Corp. Revised Date : 2012.01.13 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.6Ω (typ.) MTN12N65FP ID : 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

9.28. 12n65a 12n65af.pdf Size:1107K _goford

12N65A/12N65AF GOFORD Description Features • VDSS RDS(ON) ID @ 10V (typ) 12A 650V 0.65Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter TO-220

9.29. ssf12n65f.pdf Size:433K _silikron

SSF12N65F Main Product Characteristics: VDSS 650V RDS(on) 0.68Ω(typ.) ID 12A Marking and pin TO220F Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

9.30. brf12n65.pdf Size:852K _blue-rocket-elect

BRF12N65(BRCS12N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 用于高频开关电源，电子镇流器，UPS 电源。 High efficiency sw

9.31. cs12n65 a8h.pdf Size:346K _crhj

Silicon N-Channel Power MOSFET R ○ CS12N65 A8H VDSS 650 V General Description： ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

9.32. cs12n65f a9h.pdf Size:342K _crhj

Silicon N-Channel Power MOSFET R ○ CS12N65F A9H VDSS 650 V General Description： ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

9.33. cs12n65f a9r.pdf Size:269K _crhj

Silicon N-Channel Power MOSFET R ○ CS12N65F A9R General Description： VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

9.34. cs12n65 a8r.pdf Size:271K _crhj

Silicon N-Channel Power MOSFET R ○ CS12N65 A8R General Description： VDSS 650 V CS12N65 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

9.35. pfp12n65 pff12n65.pdf Size:1430K _china

PFP12N65/PFF12N65 FEATURES 650V N-Channel MOSFET  Originative New Design  100% EAS Test   Rugged Gate Oxide Technology Drain  BVDSS = 650 V  Extremely Low Intrinsic Capacitances ● ●  Remarkable Switching Characteristics ◀ ◀ Gate ▲ RDS(on) typ = 0.46 Ω ▲ ● ●    Unequalled Gate Charge : 48 nC (Typ.) ● ●  E

9.36. cm12n65f.pdf Size:127K _jdsemi

R CM12N65F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点 1 开关速度快 2 通态电阻小，输入电容小

9.37. cm12n65a to220a.pdf Size:123K _jdsemi

R CM12N65A 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点开关速度快通态电阻小，输入电容小 3

9.38. cm12n65af.pdf Size:125K _jdsemi

R CM12N65AF 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点开关速度快 1 2 通态电阻小，输入电容�

9.39. cm12n65 to220a.pdf Size:144K _jdsemi

R CM12N65 深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电使用及贮存时需防静电使用及贮存时需防静电使用及贮存时需防静电 ◆符合 RoHS 等

9.40. ftk12n65p f dd.pdf Size:421K _first_silicon

SEMICONDUCTOR FTK12N65P/F/DD TECHNICAL DATA 12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse i

9.41. kx12n65f.pdf Size:1489K _kexin

DIP Type MOSFET N-Channel MOSFET KX12N65F TO-220F Unit:mm 10.16 0.20 ø3.18 0.10 2.54 0.20 (7.00) (0.70) ■ Features ● VDS (V) = 650V (1.00x45 ) ● ID = 12 A (VGS = 10V) ● RDS(ON) ＜ 850mΩ (VGS = 10V) 1 2 3 MAX1.47 ● High ruggedness 0.80 0.10 D #1 0.35 0.10 +0.10 0.50 –0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0.20] [2.54 0.20] 9.40 0.20 G 1. Gate 2. Drain

9.42. msf12n65.pdf Size:995K _bruckewell

MSF12N65 650V N-Channel MOSFET Description The MSF12N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low gate charge ( typical 52nC) • High

9.43. ms12n65.pdf Size:362K _bruckewell

MS12N65 N-Channel Enhancement Mode Power MOSFET Description The MS12N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low gate charge ( typical 52n

9.44. sfp12n65.pdf Size:475K _winsemi

SFP12N65 SFP12N65 SFP12N65 SFP12N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 30nC) ■ Fast Switching Capability ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usin

9.45. wff12n65.pdf Size:388K _winsemi

WFF12N65 WFF12N65 WFF12N65 WFF12N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technol

9.46. wfp12n65.pdf Size:380K _winsemi

WFP12N65 WFP12N65 WFP12N65 WFP12N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Po wer MOS FE T is pro du ced usi ng Win se mi ’s adva nce d planar stripe, VDMOS technology. This late

9.47. wfp12n65s.pdf Size:266K _winsemi

WFP12N65S Super-junction N-Channel Power MOSFET Features ■ 12A,650V,R (Max0.30Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 84.4nC) ■ High EAS energy ■ 100%Avalanche Tested ■ RoHS Compliant ■ Maximum Junction Temperature Range(150℃) General Description This Super-junction Power MOSFET is produced using Winsemi's employs a deep trench filling process t

9.48. hy12n65t.pdf Size:128K _hy

HY12N65T / HY12N65FT 650V / 12A 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S

9.49. srm12n65.pdf Size:251K _sanrise-tech

Datasheet 12A, 650V, N-Channel Power MOSFET SRM12N65 General Description Symbol The Sanrise SRM12N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM12N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

9.50. hfs12n65u.pdf Size:158K _semihow

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65U ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

9.51. hfp12n65s.pdf Size:246K _semihow

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65S ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

9.52. hfp12n65u.pdf Size:173K _semihow

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65U ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

9.53. hfs12n65s.pdf Size:240K _semihow

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

9.54. qm12n65b.pdf Size:335K _ubiq

QM12N65B 機密第 1 頁 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM12N65B is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65B m

9.55. qm12n65f.pdf Size:311K _ubiq

QM12N65F 機密第 1 頁 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM12N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65F me

9.56. qm12n65p.pdf Size:313K _ubiq

QM12N65P 機密第 1 頁 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM12N65P is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65P me

9.57. cs12n65fa9h.pdf Size:342K _wuxi_china