12N65KL-TA Specs and Replacement
Type Designator: 12N65KL-TA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-220
12N65KL-TA substitution
12N65KL-TA datasheet
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, ... See More ⇒
12n65kl-t 12n65kg-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, ... See More ⇒
12n65kl-tf1-t.pdf
isc N-Channel MOSFET Transistor 12N65KL-TF1-T FEATURES Static Drain-Source On-Resistance R ... See More ⇒
Detailed specifications: IPI80CN10N , IRFL3713S , IRFP3207Z , IRFP4905 , IRFSL4510 , IRFSL7762 , IRFSL7787 , IRFU430A , IRF4905 , 12N65KL-TQ , 12N65KG-TA , 12N65KG-TF , 12N65KG-TQ , HY3306P , HY3306B , IRFS630B , MT3203 .
Keywords - 12N65KL-TA MOSFET specs
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