DG4N65-TO220 Specs and Replacement
Type Designator: DG4N65-TO220
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 59 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO220
DG4N65-TO220 substitution
- MOSFET ⓘ Cross-Reference Search
DG4N65-TO220 datasheet
Detailed specifications: SVD730F, SVD730T, TP0202T, TP0610K, TTK2837, UT70N03G, DG4N65-TO251, DG4N65-TO252, IRF1405, DG4N65-TO220F, DG4N65-TO262, HY3403D, HY3403U, HY3403V, HY3410P, HY3410M, HY3410B
Keywords - DG4N65-TO220 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SWF2N70D | G50N03A
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