All MOSFET. DG4N65-TO262 Datasheet

 

DG4N65-TO262 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DG4N65-TO262
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO262

 DG4N65-TO262 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DG4N65-TO262 Datasheet (PDF)

 8.1. Size:1254K  1
 dg4n65.pdf

DG4N65-TO262 DG4N65-TO262

DG4N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N65N

 9.1. Size:1358K  1
 dg4n60.pdf

DG4N65-TO262 DG4N65-TO262

DG4N60V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N60N

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SVF7N65CK

 

 
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