HY3410M PDF and Equivalents Search

 

HY3410M Specs and Replacement

Type Designator: HY3410M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 285 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 943 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220FB

HY3410M substitution

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HY3410M datasheet

 ..1. Size:1363K  hymexa
 hy3410p hy3410m hy3410b hy3410ps hy3410pm hy3410mf.pdf pdf_icon

HY3410M

HY3410P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/140A S RDS(ON)= 6.2 m (typ.) @ VGS=10V D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S S pplications D A D G G TO-3PS-3L TO-3PM-3S TO-220MF-3L Sw... See More ⇒

 8.1. Size:1041K  1
 hy3410.pdf pdf_icon

HY3410M

HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current *... See More ⇒

Detailed specifications: DG4N65-TO252, DG4N65-TO220, DG4N65-TO220F, DG4N65-TO262, HY3403D, HY3403U, HY3403V, HY3410P, IRFB7545, HY3410B, HY3410PS, HY3410PM, HY3410MF, JCS3910V, JCS3910R, MMD65R900QRH, S68N08R

Keywords - HY3410M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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