All MOSFET. JCS3910R Datasheet

 

JCS3910R Datasheet and Replacement


   Type Designator: JCS3910R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 18.9 nC
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO252
 
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JCS3910R Datasheet (PDF)

 ..1. Size:1359K  1
 jcs3910r.pdf pdf_icon

JCS3910R

N R N-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 ..2. Size:1083K  jilin sino
 jcs3910v jcs3910r jcs3910f jcs3910c.pdf pdf_icon

JCS3910R

N RN-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 ..3. Size:698K  jilin sino
 jcs3910v jcs3910r jcs3910f.pdf pdf_icon

JCS3910R

N RN-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Datasheet: HY3403V , HY3410P , HY3410M , HY3410B , HY3410PS , HY3410PM , HY3410MF , JCS3910V , HY1906P , MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , SVF10N65T , STD448S , CRTS084NE6N , HY3210P .

History: HM2301C

Keywords - JCS3910R MOSFET datasheet

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