All MOSFET. SSP60N06 Datasheet

 

SSP60N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSP60N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 120 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 1020 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: TO220

SSP60N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSP60N06 Datasheet (PDF)

0.1. ssp60n05 ssp60n06.pdf Size:273K _1

SSP60N06
SSP60N06

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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