All MOSFET. APT20M18LVR Datasheet

 

APT20M18LVR Datasheet and Replacement


   Type Designator: APT20M18LVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 2320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO264
 

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APT20M18LVR Datasheet (PDF)

 ..1. Size:255K  inchange semiconductor
apt20m18lvr.pdf pdf_icon

APT20M18LVR

isc N-Channel MOSFET Transistor APT20M18LVRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 0.1. Size:159K  apt
apt20m18b2vrg apt20m18lvrg.pdf pdf_icon

APT20M18LVR

APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV

 4.1. Size:152K  apt
apt20m18b2vfrg apt20m18lvfrg.pdf pdf_icon

APT20M18LVR

APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.2. Size:255K  inchange semiconductor
apt20m18lvfr.pdf pdf_icon

APT20M18LVR

isc N-Channel MOSFET Transistor APT20M18LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: MDE1991RH , NCEP1520K , RJK6035DPP-E0 , STK0160 , 23N50 , APT10M09LVFR , APT20M16LFLL , APT20M18LVFR , 5N65 , APT20M20LFLL , APT30M30B2FLL , APT30M36B2FLL , APT30M36LFLL , APT30M36LLL , APT30M61BFLL , APT30M75BFLL , APT4014BVFR .

History: NCE3013J | KND4365A

Keywords - APT20M18LVR MOSFET datasheet

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