All MOSFET. APT50M75LFLL Datasheet

 

APT50M75LFLL MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT50M75LFLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 570 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO264

 APT50M75LFLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT50M75LFLL Datasheet (PDF)

 ..1. Size:255K  inchange semiconductor
apt50m75lfll.pdf

APT50M75LFLL
APT50M75LFLL

isc N-Channel MOSFET Transistor APT50M75LFLLFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 0.1. Size:165K  apt
apt50m75b2fllg apt50m75lfllg.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75B2FLLAPT50M75LFLL500V 57A 0.075RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 5.1. Size:164K  apt
apt50m75b2llg apt50m75lllg.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75B2LLAPT50M75LLL500V 57A 0.075RB2LL POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalo

 6.1. Size:68K  apt
apt50m75b2ll.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75B2LLAPT50M75LLL500V 57A 0.075WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

 6.2. Size:62K  apt
apt50m75jfll.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75JFLL500V 52A 0.075WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

 6.3. Size:60K  apt
apt50m75jll.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75JLL500V 52A 0.075 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 6.4. Size:124K  apt
apt50m75jllu2.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75JLLU2APT50M75JLLU2500V 51A 0.075WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inher

 6.5. Size:63K  apt
apt50m75b2fll.pdf

APT50M75LFLL
APT50M75LFLL

APT50M75B2FLLAPT50M75LFLL500V 57A 0.075WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio

 6.6. Size:375K  inchange semiconductor
apt50m75b2ll.pdf

APT50M75LFLL
APT50M75LFLL

isc N-Channel MOSFET Transistor APT50M75B2LLFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.7. Size:375K  inchange semiconductor
apt50m75b2fll.pdf

APT50M75LFLL
APT50M75LFLL

isc N-Channel MOSFET Transistor APT50M75B2FLLFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top