APT50M80LVFR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT50M80LVFR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 58 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 423 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 1286 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO264
APT50M80LVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT50M80LVFR Datasheet (PDF)
apt50m80lvfr.pdf
isc N-Channel MOSFET Transistor APT50M80LVFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
apt50m80b2vfrg apt50m80lvfrg.pdf
APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt50m80b2vrg apt50m80lvrg.pdf
APT50M80B2VRAPT50M80LVR500V 58A 0.080POWER MOS VTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Identical
apt50m80.pdf
APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T
apt50m80b2vfr.pdf
APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T
apt50m80jlc.pdf
APT50M80JLC500V 52A 0.080 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT
apt50m80b2vr.pdf
APT50M80B2VRAPT50M80LVR500V 58A 0.080WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio
apt50m80b2lc.pdf
APT50M80B2LCAPT50M80LLC500V 58A 0.080WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fas
apt50m80b2vfr.pdf
isc N-Channel MOSFET Transistor APT50M80B2VFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
