APT6017LFLL PDF and Equivalents Search

 ..1. Size:255K  inchange semiconductor
 apt6017lfll.pdf

isc N-Channel MOSFET Transistor APT6017LFLL FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 0.1. Size:162K  apt
 apt6017b2fllg apt6017lfllg.pdf

APT6017B2FLL APT6017LFLL 600V 35A 0.170 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L... See More ⇒

 6.1. Size:161K  apt
 apt6017b2llg apt6017lllg.pdf

APT6017B2LL APT6017LLL 600V 35A 0.170 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along... See More ⇒

 7.1. Size:69K  apt
 apt6017b2ll.pdf

APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi... See More ⇒

 7.2. Size:60K  apt
 apt6017wvr.pdf

APT6017WVR 600V 31.5A 0.170 POWER MOS V TO-267 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe... See More ⇒

 7.3. Size:70K  apt
 apt6017jfll.pdf

APT6017JFLL 600V 31A 0.170W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with... See More ⇒

 7.4. Size:70K  apt
 apt6017b2fll.pdf

APT6017B2FLL APT6017LFLL 600V 35A 0.017W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona... See More ⇒

 7.5. Size:69K  apt
 apt6017jll.pdf

APT6017JLL 600V 31A 0.170W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U... See More ⇒

 7.6. Size:376K  inchange semiconductor
 apt6017b2fll.pdf

isc N-Channel MOSFET Transistor APT6017B2FLL FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒