R6007MNJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6007MNJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 545 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-263
R6007MNJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6007MNJ Datasheet (PDF)
r6007mnj.pdf
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R6007MNJDatasheetNch 600V 7A Power MOSFETlOutlinel TO-263SVDSS 600V SC-83RDS(on)(Max.) 0.730 LPT(S)ID 7APD 94W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.
r6007mnj.pdf
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isc N-Channel MOSFET Transistor R6007MNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 730m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnj.pdf
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R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
r6007jnd3.pdf
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R6007JND3DatasheetNch 600V 7A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
r6007jnx.pdf
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R6007JNXDatasheetNch 600V 7A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.780ID7APD46W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa
r6007enj.pdf
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R6007ENJ Nch 600V 7A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.620WID7A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fr
r6007knx.pdf
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R6007KNXDatasheetNch 600V 7A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.62 TO-220FMID7APD 46W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Bulk Reel size (mm) -lAppl
r6007enx.pdf
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R6007ENX Nch 600V 7A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.620WID7A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6007knj.pdf
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R6007KNJDatasheetNch 600V 7A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.62 LPT(S)ID7APD78W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed PackingT
r6007enj.pdf
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isc N-Channel MOSFET Transistor R6007ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnj.pdf
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isc N-Channel MOSFET Transistor R6007JNJFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
r6007knx.pdf
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isc N-Channel MOSFET Transistor R6007KNXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnd3.pdf
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isc N-Channel MOSFET Transistor R6007JND3FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007enx.pdf
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isc N-Channel MOSFET Transistor R6007ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007knj.pdf
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isc N-Channel MOSFET Transistor R6007KNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnx.pdf
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isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .