R6015KNJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6015KNJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 184 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27.5 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 900 pF
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO-263
R6015KNJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6015KNJ Datasheet (PDF)
r6015knj.pdf
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isc N-Channel MOSFET Transistor R6015KNJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015knz.pdf
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R6015KNZDatasheetNch 600V 15A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.29 TO-3PFID15APD 60W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lAppl
r6015knz.pdf
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isc N-Channel MOSFET Transistor R6015KNZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015anz.pdf
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Data Sheet10V Drive Nch MOSFET R6015ANZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) (2) (3)(1) Gate 0.9 Application (2) Drain 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkTypeC
r6015fnj.pdf
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R6015FNJDatasheetNch 600V 15A Power MOSFETlOutlinel LPT(S)VDSS 600VRDS(on)(Max.) 0.35 ID 15A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed to
r6015enx.pdf
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R6015ENX Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.290WID15A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6015fnx.pdf
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Data Sheet10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Fast reverse recovery time (trr) 1.21.32) Low on-resistance.0.83) Fast switching speed.2.54 2.54 0.75 2.64) Gate-source voltage(1) (2) (3) VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel us
r6015anj.pdf
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10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.243) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.40.782.75.085) Parallel use is easy. (1) Gate(1) (2) (3)(2) Drain(3) SourceEach lead has same
r6015anx.pdf
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R6015ANXNch 600V 15A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.3ID15APD(1)(2)(3) 50WFeatures Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead
r6015enz.pdf
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R6015ENZ Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.290WID15A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6015enj.pdf
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R6015ENJ Nch 600V 15A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.290WID15A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-
r6015enx.pdf
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isc N-Channel MOSFET Transistor R6015ENXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015enz.pdf
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isc N-Channel MOSFET Transistor R6015ENZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015enj.pdf
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isc N-Channel MOSFET Transistor R6015ENJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .