R6035KNZ PDF and Equivalents Search

 

R6035KNZ Specs and Replacement

Type Designator: R6035KNZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 2300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm

Package: TO-3PF

R6035KNZ substitution

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R6035KNZ datasheet

 ..1. Size:2172K  rohm
r6035knz.pdf pdf_icon

R6035KNZ

R6035KNZ Datasheet Nch 600V 35A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.102 TO-3PF ID 35A PD 102W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lAp... See More ⇒

 ..2. Size:266K  inchange semiconductor
r6035knz.pdf pdf_icon

R6035KNZ

isc N-Channel MOSFET Transistor R6035KNZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 0.1. Size:1687K  rohm
r6035knz1.pdf pdf_icon

R6035KNZ

R6035KNZ1 Datasheet Nch 600V 35A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.102 TO-247 ID 35A PD 379W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA... See More ⇒

 0.2. Size:304K  inchange semiconductor
r6035knz1.pdf pdf_icon

R6035KNZ

isc N-Channel MOSFET Transistor R6035KNZ1 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

Detailed specifications: R6535KNZ1, R8002ANJ, R8005ANJ, R8008ANJ, RJ1G08CGN, RJ1G12BGN, R6020KNZ4, DJR0417, SI2302, R6035KNZ1, R6047MNZ1, R6547ENZ1, R6547KNZ1, R6576ENZ1, R6576KNZ1, RD3G400GN, RD3G500GN

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