R6047MNZ1 PDF and Equivalents Search

 

R6047MNZ1 Specs and Replacement

Type Designator: R6047MNZ1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 440 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 3800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm

Package: TO-247

R6047MNZ1 substitution

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R6047MNZ1 datasheet

 ..1. Size:2283K  rohm
 r6047mnz1.pdf pdf_icon

R6047MNZ1

R6047MNZ1 Datasheet Nch 600V 47A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.081 TO-247 ID 47A PD 440W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Pb-free p... See More ⇒

 ..2. Size:304K  inchange semiconductor
 r6047mnz1.pdf pdf_icon

R6047MNZ1

isc N-Channel MOSFET Transistor R6047MNZ1 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 81m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 9.1. Size:910K  rohm
 r6047enz1.pdf pdf_icon

R6047MNZ1

R6047ENZ1 Nch 600V 47A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.072W ID 47A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea... See More ⇒

 9.2. Size:303K  inchange semiconductor
 r6047enz1.pdf pdf_icon

R6047MNZ1

isc N-Channel MOSFET Transistor R6047ENZ1 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 72m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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Detailed specifications: R8005ANJ, R8008ANJ, RJ1G08CGN, RJ1G12BGN, R6020KNZ4, DJR0417, R6035KNZ, R6035KNZ1, 18N50, R6547ENZ1, R6547KNZ1, R6576ENZ1, R6576KNZ1, RD3G400GN, RD3G500GN, RD3G600GN, RD3H045SP

Keywords - R6047MNZ1 MOSFET specs

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