R6047MNZ1
MOSFET. Datasheet pdf. Equivalent
Type Designator: R6047MNZ1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 440
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 47
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 150
nS
Cossⓘ -
Output Capacitance: 3800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081
Ohm
Package:
TO-247
R6047MNZ1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6047MNZ1
Datasheet (PDF)
..1. Size:2283K rohm
r6047mnz1.pdf 
R6047MNZ1DatasheetNch 600V 47A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.081 TO-247ID 47APD440W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p
..2. Size:304K inchange semiconductor
r6047mnz1.pdf
isc N-Channel MOSFET Transistor R6047MNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 81m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.1. Size:910K rohm
r6047enz1.pdf
R6047ENZ1 Nch 600V 47A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.072WID47A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
9.2. Size:303K inchange semiconductor
r6047enz1.pdf
isc N-Channel MOSFET Transistor R6047ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 72m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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