All MOSFET. RD3P100SN Datasheet

 

RD3P100SN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RD3P100SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.133 Ohm
   Package: TO-252

 RD3P100SN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RD3P100SN Datasheet (PDF)

 ..1. Size:1587K  rohm
 rd3p100sn.pdf

RD3P100SN RD3P100SN

RD3P100SNDatasheetNch 100V 10A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)133m TO-252ID10APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb

 ..2. Size:265K  inchange semiconductor
 rd3p100sn.pdf

RD3P100SN RD3P100SN

isc N-Channel MOSFET Transistor RD3P100SNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 133m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.1. Size:1640K  rohm
 rd3p130sp.pdf

RD3P100SN RD3P100SN

RD3P130SPDatasheetPch -100V -13A Power MOSFETlOutlinelVDSS-100V DPAKRDS(on)(Max.)200m TO-252ID13APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

 9.2. Size:1590K  rohm
 rd3p175sn.pdf

RD3P100SN RD3P100SN

RD3P175SNDatasheetNch 100V 17.5A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)105m TO-252ID17.5APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

 9.3. Size:265K  inchange semiconductor
 rd3p130sp.pdf

RD3P100SN RD3P100SN

isc P-Channel MOSFET Transistor RD3P130SPFEATURESDrain Current I = -13A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 200m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.4. Size:265K  inchange semiconductor
 rd3p175sn.pdf

RD3P100SN RD3P100SN

isc N-Channel MOSFET Transistor RD3P175SNFEATURESDrain Current I = 17.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT1004RCN

 

 
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