RD3U060CN PDF and Equivalents Search

 ..1. Size:1502K  rohm
 rd3u060cn.pdf

RD3U060CN Datasheet Nch 250V 6A Power MOSFET lOutline l VDSS 250V DPAK RDS(on)(Max.) 530m TO-252 ID 6A PD 52W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packi... See More ⇒

 ..2. Size:265K  inchange semiconductor
 rd3u060cn.pdf

isc N-Channel MOSFET Transistor RD3U060CN FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 530m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 9.1. Size:1490K  rohm
 rd3u040cn.pdf

RD3U040CN Datasheet Nch 250V 4A Power MOSFET lOutline l VDSS 250V DPAK RDS(on)(Max.) 1300m TO-252 ID 4A PD 29W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Pack... See More ⇒

 9.2. Size:1498K  rohm
 rd3u080cn.pdf

RD3U080CN Datasheet Nch 250V 8A Power MOSFET lOutline l VDSS 250V DPAK RDS(on)(Max.) 300m TO-252 ID 8A PD 85W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Ta... See More ⇒

 9.3. Size:265K  inchange semiconductor
 rd3u040cn.pdf

isc N-Channel MOSFET Transistor RD3U040CN FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 42m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 9.4. Size:265K  inchange semiconductor
 rd3u080cn.pdf

isc N-Channel MOSFET Transistor RD3U080CN FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 300m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒