AP0903Q Datasheet and Replacement
Type Designator: AP0903Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PMPAK3X3
AP0903Q substitution
AP0903Q Datasheet (PDF)
ap0903gm-hf.pdf

AP0903GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 8.5mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap0903gyt-hf.pdf

AP0903GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
Datasheet: RD3U080CN , FHP12N60 , FL6L52010L , MDU2653 , NCE7580 , AP040N03G , AP045N03M , AP050N03Q , IRF540N , AP10N10K , AP120N03K , AP15N10 , AP15P03Q , AP2045K , AP2080K , AP2300 , AP2301 .
History: IPA80R900P7 | RFM25N06 | UT20N03 | CHT100GP
Keywords - AP0903Q MOSFET datasheet
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History: IPA80R900P7 | RFM25N06 | UT20N03 | CHT100GP



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