All MOSFET. AP15N10 Datasheet

 

AP15N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.9 V
   |Id|ⓘ - Maximum Drain Current: 14.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.9 nC
   trⓘ - Rise Time: 25.8 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252

 AP15N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP15N10 Datasheet (PDF)

 ..1. Size:6508K  allpower
 ap15n10.pdf

AP15N10 AP15N10

AP15N10DATA SHEETDATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

 9.1. Size:216K  ape
 ap15n03ghj-hf.pdf

AP15N10 AP15N10

AP15N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage a

 9.2. Size:93K  ape
 ap15n03gi.pdf

AP15N10 AP15N10

AP15N03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 9.3. Size:209K  ape
 ap15n03gj.pdf

AP15N10 AP15N10

AP15N03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AGSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage applicationssuch as

 9.4. Size:233K  ape
 ap15n03gh.pdf

AP15N10 AP15N10

AP15N03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionAP15N03 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDSTO-252(H)

 9.5. Size:724K  ncepower
 nceap15nd10ag.pdf

AP15N10 AP15N10

http://www.ncepower.com NCEAP15ND10AGNCE N-Channel Super Trench II Power MOSFET (Primary)DescriptionGeneral FeaturesThe NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46ADS Dis uniquely optimized to provide the most efficient highR =13.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =16.5m (typical) @ V =4.5VDS(ON

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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