AP2300 Specs and Replacement
Type Designator: AP2300
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT23
AP2300 substitution
- MOSFET ⓘ Cross-Reference Search
AP2300 datasheet
ap2300gn.pdf
AP2300GN www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conve... See More ⇒
ap2300mi.pdf
AP2300MI 20V N-Channel Enhancement Mode MOSFET Description The AP2300MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.3A DS D R ... See More ⇒
ap2300ai.pdf
AP2300AI 20V N-Channel Enhancement Mode MOSFET Description The AP2300AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V,I = 3.3A DS D R ... See More ⇒
Detailed specifications: AP050N03Q, AP0903Q, AP10N10K, AP120N03K, AP15N10, AP15P03Q, AP2045K, AP2080K, IRFB4110, AP2301, AP2302, AP2302B, AP2305, AP2310S, AP2312, AP2N7002, AP3010
Keywords - AP2300 MOSFET specs
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History: TPCA8021-H
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