AP2302 MOSFET: N-Ch, 20V, 4A. Full datasheet with pinout, specifications and replacement transistor list

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AP2302GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS CompliantSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistanc

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AP2302N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 64m Surface Mount Package ID 3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resista

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AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2302A series are from Advanced Power innovated design andsilicon process technology to achieve the l

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ap2302gn.pdf pdf_icon

AP2302GNRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2ASSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiven

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ap2302agn-hf.pdf pdf_icon

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

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ap2302ai.pdf pdf_icon

AP2302AI 20V N-Channel Enhancement Mode MOSFET Description The AP2302AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS DR

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ap2302ci.pdf pdf_icon

AP2302CI 20V N-Channel Enhancement Mode MOSFET Description The AP2302CI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =2.3A DS DR

AP2302 Datasheet (PDF)

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