AP2305
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2305
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.8
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
SOT23
AP2305
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2305
Datasheet (PDF)
0.1. Size:59K ape
ap2305agn.pdf 
AP2305AGNPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G, low on-resistance and cos
0.2. Size:57K ape
ap2305cgn-hf.pdf
AP2305CGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 85m Surface Mount Device ID - 3.2AS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching,l
0.3. Size:94K ape
ap2305bgn-hf.pdf
AP2305BGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65mD Surface Mount Device ID -4.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,low on-resistan
0.4. Size:59K ape
ap2305n-hf.pdf
AP2305N-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID - 3.4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,lo
0.5. Size:94K ape
ap2305gn-hf.pdf
AP2305GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65mD Surface Mount Device ID - 4.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resis
0.6. Size:79K ape
ap2305agn-hf.pdf
AP2305AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistan
0.7. Size:866K cn vbsemi
ap2305agn.pdf
AP2305AGNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
0.8. Size:868K cn vbsemi
ap2305gn.pdf
AP2305GNwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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