AP3400 Datasheet and Replacement
Type Designator: AP3400
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 99 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
AP3400 Datasheet (PDF)
ap3400s.pdf

AIIP ERAP3400S DATA SHEET N-Channel pwer MOSFETI Descriptions N MOS N- CHA NNEL MOSFET in a SOT23 Plastic Package. SOT23 oI Features V s(V) = 30V oA lo = 5.8 (VGs = 10V) s 2Ro coN)
ap3403gh ap3403gj.pdf

AP3403GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS -30V DSimple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A GSDescriptionGDSAdvanced Power MOSFETs utilized advanced processing techniques to TO-252(H)achieve the lowest poss
ap3402geh ap3402gej.pdf

AP3402GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 35VD Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device de
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History: 12N65F | WSD30L30DN | IRL1104LPBF | SVF4N65CAK | IPI47N10S-33 | TPA60R330M | IRFZ48RS
Keywords - AP3400 MOSFET datasheet
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History: 12N65F | WSD30L30DN | IRL1104LPBF | SVF4N65CAK | IPI47N10S-33 | TPA60R330M | IRFZ48RS



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