AP4435 Datasheet and Replacement
Type Designator: AP4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
AP4435 substitution
AP4435 Datasheet (PDF)
ap4435gm-hf.pdf

AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap4435gh ap4435gj.pdf

AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag
ap4435gh-hf ap4435gj-hf.pdf

AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,
Datasheet: AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S , AP3401 , AP3407 , AP3407S , 12N60 , AP4438 , AP4606CS , AP4616 , AP4953 , AP55N03 , AP8205 , AP8205A , AP83T03K .
Keywords - AP4435 MOSFET datasheet
AP4435 cross reference
AP4435 equivalent finder
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History: IRF6708S2 | ME15N25F



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