AP4616 Datasheet and Replacement
Type Designator: AP4616
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 9.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SO8
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AP4616 Datasheet (PDF)
ap4610p.pdf

AP4610PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP4610 series are from Advanced Power innovated des
ap4618cdt.pdf

AP4618CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VD 100% Rg & UIS Test RDS(ON) 1.1m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP4618C series are from Advanced Power innovated designand silicon process technology to achieve the low
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History: AP60N2R5J | AP50T03GJ | STW25N95K3 | STW12NK95Z | AP50WN270IN | AP50T10GH | AP4P013LES
Keywords - AP4616 MOSFET datasheet
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History: AP60N2R5J | AP50T03GJ | STW25N95K3 | STW12NK95Z | AP50WN270IN | AP50T10GH | AP4P013LES



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