AP4953 Datasheet and Replacement
Type Designator: AP4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
AP4953 substitution
AP4953 Datasheet (PDF)
ap4953gm-hf.pdf

AP4953GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 53mD1D1 Fast Switching ID -5AG2 RoHS CompliantS2G1SO-8S1D2Description D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2G
ap4953gm.pdf

AP4953GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 53mD1D1 Fast Switching ID -5AG2S2G1SO-8S1D2Description D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2G1ruggedized device
ap4953m.pdf

AP4953Mwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View
Datasheet: AP3400S , AP3401 , AP3407 , AP3407S , AP4435 , AP4438 , AP4606CS , AP4616 , 5N60 , AP55N03 , AP8205 , AP8205A , AP83T03K , AP8810 , AP9926 , BR4407 , ATM2301PSA .
History: STT5N2VH5 | STL24N60M2 | SWB086R68E7T | 2SK4113 | SHD226412R | NTD4809NH-1G | 2SK1772
Keywords - AP4953 MOSFET datasheet
AP4953 cross reference
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History: STT5N2VH5 | STL24N60M2 | SWB086R68E7T | 2SK4113 | SHD226412R | NTD4809NH-1G | 2SK1772



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