ATM2301PSA Datasheet and Replacement

ATM2301PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR

ATM2306NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 3.16ADESCRIPTIONThe ATM2306NSA uses advanced trench technologyto provide excellent RDS(on) with low gate charge.This device is suitable for use as a load switch orDC/DC converter .FEATURESV =30V 1Gate 2Source 3DrainDS(V)SOT-23 Plastic PackageI =3.16ADR )47m@10V

ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFETDrain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES SOT-23 Small PackageSOT-23 V =20V, I =5ADS DR 31.8m@V =4.5VDS(ON) GSR 35.6m@V =2.5VDS(ON) GS Advanced Trench TechnologyAPPLICATIONS D Load Switching for portable Application3 DC/DC Converter1 2 G SSchematic d