AO4407C MOSFET Datasheet: P-Ch, 30V, 14A. Full specification with pinout and replacement list

AO4407C Specs and Replacement

Type Designator: AO4407C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SO8

AO4407C substitution

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AO4407C datasheet

..1. Size:332K aosemi
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AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

8.1. Size:207K aosemi
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AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON) ... See More ⇒

8.2. Size:340K aosemi
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AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V) ... See More ⇒

8.3. Size:1643K kexin
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SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V) 1 Source 5 Drain RDS(ON) 17m (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr... See More ⇒