AO4407C
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4407C
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115
Ohm
Package:
SO8
AO4407C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4407C
Datasheet (PDF)
..1. Size:332K aosemi
ao4407c.pdf
AO4407C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)
8.1. Size:207K aosemi
ao4407a.pdf
AO4407A30V P-Channel MOSFETGeneral Description Product SummaryThe AO4407A uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)with a 25V gate rating. This device is suitable for use as RDS(ON)
8.2. Size:340K aosemi
ao4407.pdf
AO440730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-20V) -12Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)
8.3. Size:1643K kexin
ao4407a.pdf
SMD Type MOSFETP-Channel MOSFETAO4407A (KO4407A)SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V)1 Source 5 Drain RDS(ON) 17m (VGS =-6V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
8.4. Size:2315K kexin
ao4407.pdf
SMD Type MOSFETP-Channel MOSFETAO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai
8.5. Size:830K cn vbsemi
ao4407a.pdf
AO4407Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
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