All MOSFET. IRFS621 Datasheet

 

IRFS621 Datasheet and Replacement


   Type Designator: IRFS621
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.3 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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IRFS621 Datasheet (PDF)

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IRFS621

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IRFS621

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IRFS621

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

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IRFS621

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Datasheet: AOTF4N60L , BLM2010E , IRFS240B , IRFS244B , IRFS254B , IRFS340B , IRFS440B , IRFS620B , IRF520 , IRFS624B , IRF624B , IRFS631 , IRFS641 , IRF720B , IRFS720B , AF2301P , APM2071PD .

History: AON6408 | HCFL65R210

Keywords - IRFS621 MOSFET datasheet

 IRFS621 cross reference
 IRFS621 equivalent finder
 IRFS621 lookup
 IRFS621 substitution
 IRFS621 replacement

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