IRFS621 Datasheet and Replacement
Type Designator: IRFS621
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
IRFS621 substitution
IRFS621 Datasheet (PDF)
irfs624b irf624b.pdf

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
Datasheet: AOTF4N60L , BLM2010E , IRFS240B , IRFS244B , IRFS254B , IRFS340B , IRFS440B , IRFS620B , CS150N03A8 , IRFS624B , IRF624B , IRFS631 , IRFS641 , IRF720B , IRFS720B , AF2301P , APM2071PD .
History: PSMN026-80YS | IRF3808SPBF | DH100P30C | PSMN023-80LS | SFG280N08KF | AP30H80G | JBL112T
Keywords - IRFS621 MOSFET datasheet
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History: PSMN026-80YS | IRF3808SPBF | DH100P30C | PSMN023-80LS | SFG280N08KF | AP30H80G | JBL112T



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