SI2333 Datasheet and Replacement

SI2333Features TrenchFET Power Mosfet Excellent RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1P-Channel MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -5

SI2333MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV -12 VDSSGate- Source VoltageV +8 VGSDrain Current (continuous)I -5.1 ADDrain Current (pulsed) I -20 ADMTotal Device Dissipa

Si2333DDSVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.028 at VGS = - 4.5 V - 6eFor definitions of compliance please see0.032 at VGS = - 3.7 V - 6ewww.vishay.com/doc?99912- 12 0.040 at VGS = - 2.5 V - 6e 9 nC0.063 at

Si2333DSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6APPLICATIONS0.059 at VGS = - 1.8 V - 3.9 Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS

Si2333CDSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 2.5 V - 4.5 9 nC- 120.059 at VGS = - 1.8 V - 3.9APPLICATIONS Load Switc

Si2333CDSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 2.5 V - 4.5 9 nC- 120.059 at VGS = - 1.8 V - 3.9APPLICATIONS Load Switc

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V)1 2+0.02+0.1 RDS(ON) 45m (VGS =-2.5V)0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 59m (VGS =-1.8V)G 1 3 D 1. Gate2. SourceS 2 3. D

SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Max

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23Unit: mm+0.1 Features2.9 -0.1+0.10.4 -0.1 VDS (V) =-12V3 ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V) RDS(ON) 45m (VGS =-2.5V)1 2+0.1+0.05 RDS(ON) 59m (VGS =-1.8V)0.95-0.1 0.1-0.01+0.11.9-0.1G 1 1.Gate3 D 2.SourceS 2 3.Drain

SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V)1 2+0.02+0.1 RDS(ON) 45m (VGS =-2.5V)0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 59m (VGS =-1.8V)G 1 3 D 1. Gate2. SourceS 2 3. D

SI2333DDS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

SI2333DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

SI2333CDS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA