ASDM30P11TD MOSFET. Datasheet pdf. Equivalent

   Type Designator: ASDM30P11TD
   Marking Code: 30P11J
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3X3-8

ASDM30P11TD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ASDM30P11TD Datasheet (PDF)

..1. Size:514K ascend
asdm30p11td.pdf

ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u

0.1. Size:514K 1
asdm30p11td-r.pdf

7.1. Size:435K 1
asdm30p30ctd-r.pdf

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

7.2. Size:577K 1
asdm30p30ctd.pdf