All MOSFET. CRST049N08N Datasheet

 

CRST049N08N MOSFET. Datasheet pdf. Equivalent


   Type Designator: CRST049N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 189 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 1207 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO220

 CRST049N08N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CRST049N08N Datasheet (PDF)

 ..1. Size:588K  crhj
 crst049n08n crss046n08n.pdf

CRST049N08N CRST049N08N

CRST049N08N, CRSS046N08N() SkyMOS1 N-MOSFET 85V, 4.1m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 4.1m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100%

 8.1. Size:568K  crhj
 crst045n10n crss042n10n.pdf

CRST049N08N CRST049N08N

CRST045N10N, CRSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

 8.2. Size:584K  crhj
 crst041n08n crss038n08n.pdf

CRST049N08N CRST049N08N

CRST041N08N, CRSS038N08N() SkyMOS1 N-MOSFET 85V, 3.4m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)3.4m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1

 8.3. Size:567K  crhj
 crst040n10n crss037n10n.pdf

CRST049N08N CRST049N08N

CRST040N10N, CRSS037N10N() SkyMOS1 N-MOSFET 100V, 3.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NDH831N

 

 
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