All MOSFET. CRTD063N04L Datasheet

 

CRTD063N04L MOSFET. Datasheet pdf. Equivalent


   Type Designator: CRTD063N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 319 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO252

 CRTD063N04L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CRTD063N04L Datasheet (PDF)

 ..1. Size:591K  crhj
 crtd063n04l.pdf

CRTD063N04L CRTD063N04L

CRTD063N04L() Trench N-MOSFET 40V, 4.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 4.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor

 9.1. Size:647K  crhj
 crtd084ne6n.pdf

CRTD063N04L CRTD063N04L

CRTD084NE6N() Trench N-MOSFET 65V, 7.1m, 85AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 65V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID85A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.2. Size:538K  crhj
 crtd055n03l.pdf

CRTD063N04L CRTD063N04L

CRTD055N03L() Trench N-MOSFET 30V, 4.3m, 58AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 4.3m Excellent QgxRDS(on) product(FOM) ID58A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.3. Size:560K  crhj
 crtd030n04l.pdf

CRTD063N04L CRTD063N04L

CRTD030N04L() Trench N-MOSFET 40V, 2.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.4. Size:563K  crhj
 crtd030n03l.pdf

CRTD063N04L CRTD063N04L

CRTD030N03L() Trench N-MOSFET 30V, 2.3m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.5. Size:588K  crhj
 crtd045n03l.pdf

CRTD063N04L CRTD063N04L

CRTD045N03LTrench N-MOSFET 30V, 3.1m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 3.1m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor control and drive Battery mana

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