All MOSFET. CRTT056N06N Datasheet

 

CRTT056N06N Datasheet and Replacement


   Type Designator: CRTT056N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 137 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 521 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO220
 

 CRTT056N06N substitution

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CRTT056N06N Datasheet (PDF)

 ..1. Size:578K  crhj
 crtt056n06n.pdf pdf_icon

CRTT056N06N

CRTT056N06N() Trench N-MOSFET 60V, 4.2m, 110AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 4.2m Excellent QgxRDS(on) product(FOM) ID110A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications Motor c

 9.1. Size:532K  crhj
 crtt029n06n.pdf pdf_icon

CRTT056N06N

CRTT029N06N() Trench N-MOSFET 60V, 2.3m, 160AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID160A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalan

 9.2. Size:501K  crhj
 crtt084ne6n.pdf pdf_icon

CRTT056N06N

CRTT084NE6N() Trench N-MOSFET 68V, 7.1m, 81AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID81A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanch

Datasheet: CRTD084NE6N , CRTD105N06L , CRTD110N03L , CRTE120N06L , CRTM025N03L , CRTS030N04L , CRTS095N12N , CRTT029N06N , IRFB31N20D , CRTT084NE6N , CS3N150AHR , SKD502T , SKSS055N08N , SKD503T , SKSS042N10N , SKST065N08N , SKSS063N08N .

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