CRTT056N06N MOSFET. Datasheet pdf. Equivalent
Type Designator: CRTT056N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 137 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 77 nC
Rise Time (tr): 56 nS
Drain-Source Capacitance (Cd): 521 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm
Package: TO220
CRTT056N06N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CRTT056N06N Datasheet (PDF)
crtt056n06n.pdf
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CRTT084NE6N() Trench N-MOSFET 68V, 7.1m, 81AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID81A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanch
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .