CS3N150AHR MOSFET. Datasheet pdf. Equivalent
Type Designator: CS3N150AHR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37.6 nC
trⓘ - Rise Time: 19.4 nS
Cossⓘ - Output Capacitance: 98 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO3P
CS3N150AHR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS3N150AHR Datasheet (PDF)
cs3n150ahr.pdf
Silicon N-Channel Power MOSFET R CS3N150 AHR General Description VDSS 1500 V CS3N150 AHR, the silicon N-channel Enhanced ID 3 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N100F,CS3N100P1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FC
cs3n100f.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd. CS3N100F1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N100F TO-220F CS3N100FAbsolute Ma
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