AS3409 Datasheet and Replacement

P-Channel MOSFET AS3409SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: B 9 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -30 VDSS

AS3402 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: X 2 or B 2Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 30 VDSS-

N-Channel MOSFET AS3404SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.

P-Channel MOSFET AS3407SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: B 7 A or B 7Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -30 VDSS

P-Channel MOSFET AS3403SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: B 3 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -30 VDSS

AS3400 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 27m@10V 30V 33m@4.5V 5.6A 51m@2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 3400. Document ID Issued Date Revised Date Revisio

P-Channel MOSFET AS3401SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: X 1 or B 1Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -30 VDSS